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inchange semiconductor product specification silicon npn power transistors 2SD2025 description ? with to-220fa package ?high dc current gain ? low saturation voltage ? darlington ? complement to type 2sb1344 applications ? for low frequency power amplifier and power driver applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector -emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 10 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2025 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma; i b =0 100 v v (br)cbo collector-base breakdown voltage i c =50 | a; i e =0 100 v v cesat collector-emitter saturation voltage i c =3a ;i b =6ma 1.5 v i cbo collector cut-off current v cb =100v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe dc current gain i c =2a ; v ce =3v 1000 20000 f t transition frequency i c =0.2a ; v ce =5v 40 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 50 pf
inchange semiconductor product specification 3 silicon npn power transistors 2SD2025 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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